Title :
Infrared response and quantum efficiency of in-doped silicon (n) structure
Author :
Mohamed, Wagah F. ; Mohammed, Khalid K.
Author_Institution :
Dept. of Electr. Eng., Mosul Univ., Iraq
Abstract :
In this paper indium is examined for use as an electrical and optical dopant with the n-type silicon wafer to fabricate the In-doped silicon (n) structure. The subgap response of the resulting structure is particularly strong and extends to wavelengths up to 1100 nm, and more. While the response of the structure is very poor at the visible region. The structure has a maximum external and internal quantum efficiency at wavelength equal to 1100 nm
Keywords :
elemental semiconductors; indium; semiconductor doping; silicon; solar cells; 1100 nm; In doped Si structure; Si:In; electrical dopant; electron-hole pairs; impurity photovoltaic effect; maximum external quantum efficiency; maximum internal quantum efficiency; multi-step absorption mechanism; n-type silicon wafer; optical dopant; solar cell; solar cell infrared response; spectral responsivity measurements; subgap photons; subgap response; Silicon;
Conference_Titel :
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location :
Beirut
Print_ISBN :
0-7803-7117-8
DOI :
10.1109/CMPLES.2000.939852
