Title :
Marx-stacked IGBT modulators for high voltage, high power applications
Author :
Richter-Sand, R.J. ; Adler, R.J. ; Finch, R. ; Ashcraft, B.
Author_Institution :
North Star Res. Corp., Albuquerque, NM, USA
fDate :
30 June-3 July 2002
Abstract :
A number of applications that require <1 μsec risetimes at high voltage and current cannot be easily satisfied with standard designs employing low voltage solid-state components driving a large step-up turns ratio transformer. North Star Research reports on the development of several products that employ the topological erection of voltages using a Marx generator stacking arrangement of lower voltage IGBT devices. The configuration does not place the semiconductors in a series arrangement, thereby eliminating a failure mode wherein the loss of a single device would over-stress the stack of IGBT parts. A plasma source ion implantation (PSII) modulator has been built using this technology development and provides 30 kV, 400 A, 1-50 μsec variable pulse widths, and operates at 7.5 kW of average power. Peak powers as high as 2.4 MW have been demonstrated.
Keywords :
insulated gate bipolar transistors; plasma immersion ion implantation; plasma sources; power bipolar transistors; pulse generators; pulsed power supplies; 1 to 50 mus; 2.4 MW; 30 kV; 400 A; 7.5 kW; Marx generator stacking arrangement; Marx-stacked IGBT modulators; North Star Research; high power; high voltage; lower voltage IGBT devices; plasma source ion implantation modulator; Construction; Diodes; Fault detection; Insulated gate bipolar transistors; Low voltage; Pulse power systems; Pulse transformers; Pulse width modulation; Solid state circuits; Space vector pulse width modulation;
Conference_Titel :
Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International
Print_ISBN :
0-7803-7540-8
DOI :
10.1109/MODSYM.2002.1189497
