Title :
Degradation by solar radiation on the performances for microelectronic components
Author :
Touft, N. ; El-Tahchi, M. ; Pélanchon, F. ; Mialhe, P.
Author_Institution :
Centre d´´Etudes Fondamentales, Perpignan Univ., France
Abstract :
A study on the effects of ionising radiation on the transport phenomena of carriers in the substrate-drain junction of power transistors is realised for doses compatible with a high atmospheric exposure. The strong augmentation of the recombination currents and of the ideal factor are observed. The degradation of parameters of the junction is strongly dependent on the total dose. These effects are discussed and a new method is introduced for the characterisation of a functioning system in a terrestrial atmospheric environment
Keywords :
electron-hole recombination; insulated gate field effect transistors; power field effect transistors; radiation effects; HEXFET; carriers; high atmospheric exposure; ionising radiation; microelectronic components degradation; microelectronic components performances; power transistors; recombination currents; solar radiation; substrate-drain junction; terrestrial atmospheric environment; transport phenomena; Cobalt; Degradation; FETs; Fabrication; Polarization; Production;
Conference_Titel :
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location :
Beirut
Print_ISBN :
0-7803-7117-8
DOI :
10.1109/CMPLES.2000.939888
