• DocumentCode
    3329872
  • Title

    Detection of ionizing radiation using graphene field effect transistors

  • Author

    Foxe, Michael ; Lopez, Gabriel ; Childres, Isaac ; Jalilian, Romaneh ; Roecker, Caleb ; Boguski, John ; Jovanovic, Igor ; Chen, Yong P.

  • Author_Institution
    Sch. of Nucl. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    90
  • Lastpage
    95
  • Abstract
    We propose schemes of using graphene field effect transistors (GFET) to detect ionizing radiation. The detection is based on the high sensitivity of graphene to local change of electrical field that can result from the interaction of radiation with a semiconductor substrate in a GFET. We present preliminary modeling and experimental work to develop a prototype sensor, and discuss potential advantages compared to conventional detectors.
  • Keywords
    graphene; position sensitive particle detectors; transistors; GFET; electrical field; graphene field effect transistors; ionizing radiation detection; semiconductor substrate; FETs; Ionizing radiation; Ionizing radiation sensors; Nanotechnology; Physics; Prototypes; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5401864
  • Filename
    5401864