DocumentCode
3329872
Title
Detection of ionizing radiation using graphene field effect transistors
Author
Foxe, Michael ; Lopez, Gabriel ; Childres, Isaac ; Jalilian, Romaneh ; Roecker, Caleb ; Boguski, John ; Jovanovic, Igor ; Chen, Yong P.
Author_Institution
Sch. of Nucl. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
Oct. 24 2009-Nov. 1 2009
Firstpage
90
Lastpage
95
Abstract
We propose schemes of using graphene field effect transistors (GFET) to detect ionizing radiation. The detection is based on the high sensitivity of graphene to local change of electrical field that can result from the interaction of radiation with a semiconductor substrate in a GFET. We present preliminary modeling and experimental work to develop a prototype sensor, and discuss potential advantages compared to conventional detectors.
Keywords
graphene; position sensitive particle detectors; transistors; GFET; electrical field; graphene field effect transistors; ionizing radiation detection; semiconductor substrate; FETs; Ionizing radiation; Ionizing radiation sensors; Nanotechnology; Physics; Prototypes; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location
Orlando, FL
ISSN
1095-7863
Print_ISBN
978-1-4244-3961-4
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2009.5401864
Filename
5401864
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