Highly reliable 0.18 μm Au/WSi gate pseudomorphic HJFETs with individually grounded source finger vias

Author

Unozawa, K. ; Takahashi, K. ; Sakura, N. ; Matsumura, T. ; Mizoe, J. ; Nagai, K.

Author_Institution

USLI Device Dev. Labs., NEC Corp., Otsu, Japan

fYear

1997

fDate

7-8 Jul 1997

Firstpage

44

Lastpage

47

Abstract

A highly reliable 0.18 μm Au/WSi refractory gate pseudomorphic HJFET with individually grounded source finger vias has been developed for V-band MMIC applications. The HJFET exhibited an MTTF of 1.6E7 hours at a channel temperature of 130°C. A three-stage amplifier MMIC has demonstrated state-of-the-art performance, generating 16 dBm output power with 25 dB small signal gain at 60 GHz band. This result demonstrates high potential of our MMIC technology

Keywords

JFET integrated circuits; MMIC amplifiers; field effect MIMIC; gold; integrated circuit design; integrated circuit metallisation; integrated circuit reliability; junction gate field effect transistors; millimetre wave amplifiers; millimetre wave field effect transistors; semiconductor device metallisation; tungsten compounds; 0.18 micron; 130 C; 25 dB; 60 GHz; Au-WSi; Au/WSi gate pseudomorphic HJFETs; EHF; MIMIC; V-band MMIC applications; grounded source finger vias; refractory gate; three-stage amplifier MMIC; Dry etching; Fabrication; Fingers; Gold; MMICs; Millimeter wave technology; Performance gain; Power amplifiers; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves, 1997 Topical Symposium on

Conference_Location

Kanagawa

Print_ISBN

0-7803-3887-1

Type

conf

DOI

10.1109/TSMW.1997.702441

Filename

702441