Title :
Field analysis of TWT HVPS transformer and HV module
Author :
Kim, S.C. ; Nam, S.H. ; Kim, D.T. ; Ha, K.M. ; Jeong, S.H. ; Park, D.S. ; Kwon, H.M. ; Chun, J.H.
Author_Institution :
Accelerator Lab., POSTECH, Kyungbuk, South Korea
fDate :
30 June-3 July 2002
Abstract :
The role of a high power density DC power supply is very important in designing a compact and high efficiency TWT microwave amplifier. In order to fabricate a compact power supply, it is necessary to reduce transformer volume by increasing switching frequency of the power supply. However, a step-up ratio of the transformer in the high voltage DC power supply could not be indefinitely increased due mainly to self-resonance by stray capacitance and leakage inductance. Therefore, the pulse transformer should be carefully designed to fulfill its function in the power supply. A high frequency and high voltage pulse transformer is designed, fabricated, and tested. Switching frequency of the transformer is 100 kHz. Input and output voltages of the transformer are 250 V and 4 kV, respectively. Normal operation power of the transformer is 3 kW. Maximum allowed volume of the transformer is 400 cm3. The transformer is installed in a metal box that has nominal operation temperature of 85 degree centigrade. The transformer and other high voltage components in the box are molded with silicon RTV that has a very low thermal conductivity. Calculated and measured results of various parameters such as transformer loss, temperature rise, leakage inductance, distributed capacitance, and hysterisis characteristics are presented. In addition, field analysis results obtained with ANSYS code for the transformer and the HV module are also presented.
Keywords :
capacitance; inductance; microwave amplifiers; pulse transformers; pulsed power supplies; switching; thermal conductivity; travelling wave tubes; 100 kHz; 250 V; 3 kW; 4 kV; ANSYS code; HV module; TWT HVPS transformer; compact power supply; distributed capacitance; field analysis; high efficiency TWT microwave amplifier; high power density DC power supply; high voltage components; hysterisis characteristics; input voltage; leakage inductance; metal box; nominal operation temperature; output voltage; power supply; self resonance; silicon RTV; step-up ratio; stray capacitance; switching frequency; temperature rise; transformer loss; transformer volume reduction; very low thermal conductivity; Capacitance; High power amplifiers; Inductance; Microwave amplifiers; Power supplies; Pulse transformers; Pulsed power supplies; Switching frequency; Temperature; Thermal conductivity;
Conference_Titel :
Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International
Print_ISBN :
0-7803-7540-8
DOI :
10.1109/MODSYM.2002.1189526