Errata

In the electronic version of this paper, the sentence ´High value unsilicided poly gate resistors (40 kH) are used to improve IL further and mitigate the degradation in power handling capability at high input power [7]´ should have appeared as: High value unsilicided poly gate resistors (40 k/spl Omega) are used to improve IL further and mitigate the degradation in power handling capability at high input power.