A two-switch mode pulse modulator for plasma-based ion implantation and deposition

Author

Yukimura, Ken ; Matsunaga, Koichi

Author_Institution

Dept. of Electr. Eng., Doshisha Univ., Kyoto, Japan

fYear

2002

fDate

30 June-3 July 2002

Firstpage

544

Lastpage

547

Abstract

A new-concept pulse modulator was developed for a plasma-based ion implantation (PBII) system, where two hard-tubes as a main switch are running in parallel to increase current capacity for outputting the pulse voltage and another two hard-tubes are used for releasing the charges stored in the stray and ion sheath-capacitor. A maximum output voltage is 40 kV with an average current of 20 A, where the pulse width is varied from 2 μs to 100 μs. The rise time less than 1 μs at an output voltage of 40 kV and a maximum repetition rate of 2.5 kHz.

Keywords

plasma immersion ion implantation; power capacitors; pulse generators; pulsed power supplies; switched mode power supplies; 2 to 100 mus; 2.5 kHz; 20 A; 40 kV; current capacity; hard-tubes; ion sheath-capacitor; output voltage; plasma-based ion deposition; plasma-based ion implantation; pulse voltage; pulsed power supply; repetition rate; two-switch mode pulse modulator; Circuits; Ion implantation; Plasma accelerators; Plasma immersion ion implantation; Plasma sheaths; Pulse modulation; Shape; Substrates; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International

ISSN

1076-8467

Print_ISBN

0-7803-7540-8

Type

conf

DOI

10.1109/MODSYM.2002.1189536

Filename

1189536