Title :
A 3-GHz fully-integrated CMOS Class-AB power amplifier
Author :
Ng, Yuen Sum ; Leung, Lincoln Lai Kan ; Leung, Ka Nang
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong, China
Abstract :
A 3-GHz CMOS Class-AB power amplifier (PA) is presented in this paper. A two-stage cascode topology is used. All of the passive components including the drain inductors and load-pull output matching networks are integrated on the same chip to reduce the errors introduced to the output matching network and resonant tank in the driver. The circuit was fabricated in a 0.18-mum CMOS process. The measurement results show that the PA achieves a high power gain of 27.9 dB with saturated power of 20.6 dBm and power-added efficiency (PAE) of 12.7%. The PA was tested with IEEE 802.11a (WLAN) 54-Mbps and IEEE 802.16e (Mobile WiMAX) OFDM signals at 3-GHz. Error Vector Magnitudes (EVM) of -26.4 dB and -30.3 dB were measured, respectively. It is proved that the PA fulfils the requirements of both WLAN and WiMAX standards.
Keywords :
CMOS analogue integrated circuits; OFDM modulation; driver circuits; microwave integrated circuits; microwave power amplifiers; power amplifiers; IEEE 802.11a; IEEE 802.16e; OFDM signals; WLAN standards; WiMAX standards; circuit fabrication; driver resonant tank; error vector magnitudes; frequency 3 GHz; fully-integrated CMOS Class-AB power amplifier; load-pull output matching networks; power-added efficiency; size 0.18 mum; two-stage cascode topology; CMOS process; Circuit topology; Driver circuits; Impedance matching; Inductors; Network topology; Power amplifiers; Resonance; WiMAX; Wireless LAN; CMOS; Class-AB; Load Pull; Output Matching Network; Power Amplifiers;
Conference_Titel :
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-4479-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2009.5235952