DocumentCode
3330606
Title
MHz pulsed power generator using MOSFET
Author
Jiang, Weihua ; Matsuda, Takuya ; Yatsui, Kiyoshi ; Tokuchi, Akira
Author_Institution
Extreme Energy-Density Res. Inst., Nagaoka Univ. of Technol., Niigata, Japan
fYear
2002
fDate
30 June-3 July 2002
Firstpage
599
Lastpage
601
Abstract
A stacked MOSFET switch has been developed and tested. Commercially available MOSFETs (900 V, 8 A) are used to form the stack of 8 in series and 6 in parallel. Each FET is triggered by an optically coupled signal so that all units are controlled simultaneously by a common trigger circuit. Experimental results have shown that such this stacked MOSFET switch is capable of working under the voltage of 5 kV, turning on and off of 75 A in ∼ 30 ns, at the maximum repetition rate of 2 MHz.
Keywords
field effect transistor switches; power MOSFET; pulse generators; pulsed power supplies; pulsed power switches; trigger circuits; 2 MHz; 30 ns; 5 kV; 75 A; 8 A; 900 V; common trigger circuit; optically coupled signal; pulsed power generator; stacked MOSFET switch; Circuit testing; Coupling circuits; FETs; MOSFET circuits; Optical coupling; Optical pulse generation; Optical switches; Power MOSFET; Power generation; Pulse generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International
ISSN
1076-8467
Print_ISBN
0-7803-7540-8
Type
conf
DOI
10.1109/MODSYM.2002.1189550
Filename
1189550
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