DocumentCode :
33309
Title :
TSV-Aware Interconnect Distribution Models for Prediction of Delay and Power Consumption of 3-D Stacked ICs
Author :
Dae Hyun Kim ; Mukhopadhyay, Saibal ; Sung Kyu Lim
Author_Institution :
Cadence Design Syst., San Jose, CA, USA
Volume :
33
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
1384
Lastpage :
1395
Abstract :
3-D integrated circuits (3-D ICs) are expected to have shorter wirelength, better performance, and less power consumption than 2-D ICs. These benefits come from die stacking and use of through-silicon vias (TSVs) fabricated for interconnections across dies. However, the use of TSVs has several negative impacts such as area and capacitance overhead. To predict the quality of 3-D ICs more accurately, TSV-aware 3-D wirelength distribution models considering the negative impacts were developed. In this paper, we apply an optimal buffer insertion algorithm to the TSV-aware 3-D wirelength distribution models and present various prediction results on wirelength, delay, and power consumption of 3-D ICs. We also apply the framework to 2-D and 3-D ICs built with various combinations of process and TSV technologies and predict the quality of today and future 3-D ICs.
Keywords :
buffer circuits; delay circuits; integrated circuit interconnections; integrated circuit modelling; low-power electronics; three-dimensional integrated circuits; 3D integrated circuits; 3D stacked ICs; TSV-aware 3D wirelength distribution models; TSV-aware interconnect distribution models; buffer insertion algorithm; delay prediction; power consumption; through-silicon vias; Computational modeling; Delays; Integrated circuit modeling; Logic gates; Predictive models; Solid modeling; Through-silicon vias; 3-D IC; interconnect prediction; through-silicon via (TSV); wirelength distribution;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2014.2329472
Filename :
6879634
Link To Document :
بازگشت