Influence of O2 plasma treatment on H2 post-treated BZO thin films for TCO of a-Si solar cell

Author

Yoo, Ha Jin ; Son, Chang Gil ; Choi, Eun Ha ; Cho, Guangsup ; Kwon, Gi Chung ; Cho, Won Tea ; Park, Sang Gi

Author_Institution

Dept. of Electrophys., Kwangwoon Univ., Seoul, South Korea

fYear

2010

fDate

20-24 June 2010

Firstpage

1

Lastpage

1

Abstract

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells^1-2.

Keywords

II-VI semiconductors; boron; hydrogen; oxygen; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; solar cells; wide band gap semiconductors; zinc compounds; H₂; O₂; Si; Si thin film solar cell; ZnO:B; coating material; light trapping effect; low sheet resistivity; metal organic chemical vapor deposition; plasma treatment; post-treated thin films; transparent conductive oxide; Hydrogen; Optical films; Photovoltaic cells; Plasma applications; Plasma measurements; Plasma properties; Surface morphology; Surface treatment; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2010 Abstracts IEEE International Conference on

Conference_Location

Norfolk, VA

ISSN

0730-9244

Print_ISBN

978-1-4244-5474-7

Electronic_ISBN

0730-9244

Type

conf

DOI

10.1109/PLASMA.2010.5534131

Filename

5534131