DocumentCode
3331612
Title
Performance enhancement of polysilicon electrothermal microactuators by localized self-annealing
Author
Chu, Lany L. ; Nelson, Darcee ; Oliver, Andrew D. ; Gianchandani, Yogesh B.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
68
Lastpage
71
Abstract
Microsystems using electrothermal bent-beam microactuators have been demonstrated for a variety of applications including optical attenuators, RF switches, and micro positioners for scanning microscopy, creating an important need for information on the longevity of these devices. This paper reports on the lifetime pulse testing results of polysilicon actuators. Devices have been operated up to 60 million cycles without failure, but over tens of millions of cycles the displacement for a given actuator design can either increase or decrease depending on the geometry of the device and operating conditions, both of which are related to temperature and stress of the structural members. In certain cases actuator displacement increased by more than 50% (up to 100%) of the initial displacement, while for other cases it decreases by more than 25%. Polysilicon grain transformations are observed over extended operation at high temperatures. Performance changes are correlated to material properties using SEM and TEM images.
Keywords
annealing; elemental semiconductors; microactuators; scanning electron microscopy; silicon; transmission electron microscopy; SEM; Si; TEM; lifetime pulse testing; localized self-annealing; polysilicon electrothermal microactuators; polysilicon grain transformations; stress effects; temperature effects; Actuators; Electrothermal effects; Microactuators; Optical attenuators; Optical microscopy; Optical pulses; Optical switches; Radio frequency; Scanning electron microscopy; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189689
Filename
1189689
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