• DocumentCode
    3331865
  • Title

    Double-drift diodes for super wideband noise oscillator with increased noise level

  • Author

    Loshitski, P.P. ; Pavlyuchenko, A.V.

  • Author_Institution
    Nat. Tech. Univ. of Ukraine, Kiev
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    147
  • Lastpage
    149
  • Abstract
    50...70 dB/kT0 ENR levels are obtained during avalanche diode in anomaly mode based wideband noise oscillators research. Specially developed impulse method makes double-drift diodepsilas selection possible just as allows to determine drift region chargepsilas asymmetry for obtaining great ENR level.
  • Keywords
    avalanche diodes; impulse noise; oscillators; avalanche diode; charge asymmetry; double-drift diodes; impulse method; increased noise level; super wideband noise oscillator; Circuits; Diodes; Microwave frequencies; Microwave oscillators; Narrowband; Noise level; Plasma applications; Plasma immersion ion implantation; Ultra wideband technology; Voltage; ENR; anomaly mode; avalanche diode; p- and n- drift region’s asymmetry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrawideband and Ultrashort Impulse Signals, 2008. UWBUSIS 2008. 4th International Conference on
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-2738-3
  • Type

    conf

  • DOI
    10.1109/UWBUS.2008.4669388
  • Filename
    4669388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3331865