DocumentCode
3332121
Title
Secondary DOF and their effect on the instability of electrostatic MEMS devices
Author
Elata, David ; Bochobza-Degani, Ofir ; Feldman, Shai ; Nemirovsky, Yael
Author_Institution
Technion-Israel Inst. of Technol., Haifa, Israel
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
177
Lastpage
180
Abstract
The purpose of this work is to demonstrate the significance, and to quantify and model the effect, of secondary degrees-of-freedom (DOF) on the response and instability of electrostatically actuated MEMS devices. Also, a novel reduced-order modeling approach is presented, and is used to interpret and analyze the measured electromechanical response of fabricated test devices. This novel modeling approach is shown to be more efficient than current state-of-the-art reduced-order models that are based on voltage iterations.
Keywords
electrostatic devices; micromechanical devices; electromechanical response; electrostatic MEMS device instability; reduced-order modeling approach; secondary degrees-of-freedom; Actuators; Capacitors; Electrodes; Electrostatics; Equations; Microelectromechanical devices; Potential energy; Process design; Suspensions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189715
Filename
1189715
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