• DocumentCode
    3332121
  • Title

    Secondary DOF and their effect on the instability of electrostatic MEMS devices

  • Author

    Elata, David ; Bochobza-Degani, Ofir ; Feldman, Shai ; Nemirovsky, Yael

  • Author_Institution
    Technion-Israel Inst. of Technol., Haifa, Israel
  • fYear
    2003
  • fDate
    19-23 Jan. 2003
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    The purpose of this work is to demonstrate the significance, and to quantify and model the effect, of secondary degrees-of-freedom (DOF) on the response and instability of electrostatically actuated MEMS devices. Also, a novel reduced-order modeling approach is presented, and is used to interpret and analyze the measured electromechanical response of fabricated test devices. This novel modeling approach is shown to be more efficient than current state-of-the-art reduced-order models that are based on voltage iterations.
  • Keywords
    electrostatic devices; micromechanical devices; electromechanical response; electrostatic MEMS device instability; reduced-order modeling approach; secondary degrees-of-freedom; Actuators; Capacitors; Electrodes; Electrostatics; Equations; Microelectromechanical devices; Potential energy; Process design; Suspensions; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7744-3
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2003.1189715
  • Filename
    1189715