DocumentCode :
3332121
Title :
Secondary DOF and their effect on the instability of electrostatic MEMS devices
Author :
Elata, David ; Bochobza-Degani, Ofir ; Feldman, Shai ; Nemirovsky, Yael
Author_Institution :
Technion-Israel Inst. of Technol., Haifa, Israel
fYear :
2003
fDate :
19-23 Jan. 2003
Firstpage :
177
Lastpage :
180
Abstract :
The purpose of this work is to demonstrate the significance, and to quantify and model the effect, of secondary degrees-of-freedom (DOF) on the response and instability of electrostatically actuated MEMS devices. Also, a novel reduced-order modeling approach is presented, and is used to interpret and analyze the measured electromechanical response of fabricated test devices. This novel modeling approach is shown to be more efficient than current state-of-the-art reduced-order models that are based on voltage iterations.
Keywords :
electrostatic devices; micromechanical devices; electromechanical response; electrostatic MEMS device instability; reduced-order modeling approach; secondary degrees-of-freedom; Actuators; Capacitors; Electrodes; Electrostatics; Equations; Microelectromechanical devices; Potential energy; Process design; Suspensions; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-7744-3
Type :
conf
DOI :
10.1109/MEMSYS.2003.1189715
Filename :
1189715
Link To Document :
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