DocumentCode :
3333059
Title :
Modeling, simulation and testing of MCT under zero voltage resonant switching
Author :
Lee, T. ; Zinger, D.S. ; Elbuluk, M.E.
Author_Institution :
Dept. of Electr. Eng., Akron Univ., OH, USA
fYear :
1991
fDate :
Oct. 28 1991-Nov. 1 1991
Firstpage :
341
Abstract :
An MCT (MOS controlled thyristor) model based on a two-transistor SCR (series resonant converter) model is developed which is useful in determining the behavior of the MCT in different circuits. The model is found to work successfully in PSPICE simulations under zero voltage square wave and resonant switching. An experimental prototype was built, tested, and compared with the simulation results. A major part of the prototype construction is to investigate the gate drive requirements for the MCT. The model shows fair correspondence to experimental behavior found in both hard and soft switched circuits.<>
Keywords :
circuit analysis computing; digital simulation; equivalent circuits; metal-insulator-semiconductor devices; power convertors; semiconductor device models; switching circuits; thyristor applications; thyristors; MOS controlled thyristor; PSPICE simulations; gate drive requirements; hard switched circuits; modelling; series resonant converter; simulation; soft switched circuits; testing; two-transistor SCR; zero voltage resonant switching; zero voltage square wave switching; Circuit simulation; Circuit testing; MOSFETs; Prototypes; RLC circuits; Resonance; SPICE; Thyristors; Virtual prototyping; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, Control and Instrumentation, 1991. Proceedings. IECON '91., 1991 International Conference on
Conference_Location :
Kobe, Japan
Print_ISBN :
0-87942-688-8
Type :
conf
DOI :
10.1109/IECON.1991.239360
Filename :
239360
Link To Document :
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