Title :
Generation-recombination noise in GaAs p+-i-n+ diodes
Author :
Lin, H.S. ; Colestock, P.A. ; Fang, P. ; Chen, T.M.
Author_Institution :
Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA
Abstract :
Low frequency noise measurements were made on GaAs p-i-n diodes in the temperature and frequency range of 220 to 300 K and 1 kHz to 1 MHz. Comparison of experimental data with generation-recombination-noise theory revealed the presence of a major trapping state within the I-region of these diodes. The activation energy of this trapping state is evaluated. It is concluded that the technique of trapping state identification from low-frequency noise measurements applies to GaAs p-i-n diodes
Keywords :
III-V semiconductors; electron device noise; electron traps; gallium arsenide; p-i-n diodes; random noise; 1 kHz to 1 MHz; 220 to 300 K; GaAs; I-region; activation energy; generation-recombination-noise theory; low-frequency noise; p+-i-n+ diodes; trapping state; Diodes; Equations; Fluctuations; Gallium arsenide; Integrated circuit noise; Knee; Low-frequency noise; Noise generators; Reactive power; Testing;
Conference_Titel :
Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE
Conference_Location :
Columbia, SC
DOI :
10.1109/SECON.1989.132631
