• DocumentCode
    3333652
  • Title

    The researches on radiation effects of ferroelectric-electret composite

  • Author

    Zou, Weiqin ; Li, Duanyong ; Xu, Yangzi ; Xuexiong Huang ; Li, Jingde

  • Author_Institution
    Dept. of Electron. Eng., Guangdong Inst. of Nat., Guangzhou, China
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    291
  • Lastpage
    298
  • Abstract
    This paper studied the Radiation Effects of Ferroelectric-Electret composite. Found it has changed that the data of resistivity ρ, dielectric constant ε, pyroelectric coefficient P, piezoelectric constant d33 and the characteristics of pyroelectric relaxation and polarization relaxation since composite undergoing gamma radiation, and found there are two limit value of accumulative radiation dose: r0 and R0 for composite. When the accumulative radiation dose is near r0, the attenuation rate of ρ, ε, P and d33 is the same as it of the natural ageing. When the accumulative radiation dose exceeds R0, the composite would be damaged forever. The chief reason of radiation effects of composite is that the local state in composite, especially near the phase boundaries of two materials, has changed since ionization action resulting from gamma radiation
  • Keywords
    composite materials; dielectric relaxation; electrets; electrical resistivity; ferroelectric materials; gamma-ray effects; permittivity; piezoelectric materials; pyroelectricity; accumulative radiation dose; attenuation rate; dielectric constant; ferroelectric-electret composite; gamma radiation effect; ionization; phase boundary; piezoelectric constant; polarization relaxation; pyroelectric coefficient; pyroelectric relaxation; resistivity; Aging; Attenuation; Composite materials; Conductivity; Dielectric constant; Gamma rays; Phase change materials; Piezoelectric polarization; Pyroelectricity; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578086
  • Filename
    578086