Electron emission characteristics of pulsed laser deposited diamond-like films

Author

Chuang, F.Y. ; Sun, C.Y. ; Cheng, H.F. ; Huang, C.M. ; Lin, I.N.

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan

fYear

1996

fDate

25-30 Sep 1996

Firstpage

299

Lastpage

304

Abstract

Diamond like carbon (DLC) films possessing large electron emission capacity was obtained by pulsed laser deposition process. AFM morphologies and Raman spectra inferred that the proportion of SP³-bonds is the predominating factor modifying the field emission characteristics. Large laser fluence and moderately high substrate temperature are thus required. The critical laser fluence needed to deposit DLC films with large emission current density was 10 J/cm² for 248 nm (KrF) laser beams and 4 J/cm² for 193 nm (ArF) laser beams, respectively. The highest emission current density was 80 μA/cm² for DLC films deposited at 400°C using 248 nm laser beams and was 160 μA/cm² for those grown at 200°C using 193 nm laser beams. The turn on electric field was, respectively, 11.6 MV/m and 11.4 MV/m

Keywords

Raman spectra; atomic force microscopy; carbon; electron field emission; pulsed laser deposition; AFM morphology; C; Raman spectra; diamond like carbon film; electron emission; field emission; pulsed laser deposition; Carbon dioxide; Current density; Diamond-like carbon; Electron emission; Laser beams; Laser modes; Morphology; Optical pulses; Pulsed laser deposition; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1996. (ISE 9), 9th International Symposium on

Conference_Location

Shanghai

Print_ISBN

0-7803-2695-4

Type

conf

DOI

10.1109/ISE.1996.578087

Filename

578087