DocumentCode
3334005
Title
Threshold-based voltage reference with pn- junction temperature compensation
Author
Wang, Yen-Ting ; Geiger, Randall L. ; Huang, Shu-Chuan
Author_Institution
Dept. of Electr. Eng., Tatung Univ., Taipe, Taiwan
fYear
2009
fDate
2-5 Aug. 2009
Firstpage
156
Lastpage
159
Abstract
A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to compensate for the negative temperature coefficient of the threshold voltage. Implemented in a standard 0.6mum CMOS process with an output of 1.67V, it has a temperature coefficient of 4.9ppm/degC over a 195 degC range.
Keywords
CMOS integrated circuits; MOSFET; p-n junctions; CMOS process; NMOS transistor; negative temperature coefficient; pn-junction PTAT current generator; proportional to absolute temperature; size 0.6 mum; temperature 195 degC; threshold voltage; voltage 1.67 V; CMOS process; Circuits; Low voltage; MOS devices; MOSFETs; Photonic band gap; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location
Cancun
ISSN
1548-3746
Print_ISBN
978-1-4244-4479-3
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2009.5236128
Filename
5236128
Link To Document