Title :
Sodium contamination in integrated MEMS packaged by anodic bonding
Author :
Schjolberg- Henriksen, K. ; Jensen, G.U. ; Hanneborg, A. ; Jakobsen, H.
Author_Institution :
Dept. of Phys., Oslo Univ., Norway
Abstract :
A study of ionic contamination of SiO2 during anodic bonding is presented, using metal-oxide-semiconductor capacitors as test structures. We found that anodic bonding caused the sodium concentration to increase with values between 1010cm-2 and 1013cm-2. The largest increases resulted in sodium concentrations that are incompatible with CMOS electronics. The gate electrodes were found to partly shield the oxide from contamination. A PECVD nitride film protected the capacitors more efficiently. The results show that nitride protection of the electronics is essential to minimise sodium contamination if anodic bonding is used to package monolithically integrated MEMS.
Keywords :
MOS capacitors; adhesion; integrated circuit packaging; micromechanical devices; plasma CVD coatings; silicon compounds; sodium; CMOS electronics; PECVD nitride film; SiO2:Na; anodic bonding; integrated MEMS; metal-oxide-semiconductor capacitors; nitride protection; package monolithically integrated MEMS; sodium contamination; Contamination; Electrodes; Electronics packaging; Glass; MOS capacitors; Micromechanical devices; Protection; Silicon; Wafer bonding; Wafer scale integration;
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
Print_ISBN :
0-7803-7744-3
DOI :
10.1109/MEMSYS.2003.1189827
