Sodium contamination in integrated MEMS packaged by anodic bonding

Author

Schjolberg- Henriksen, K. ; Jensen, G.U. ; Hanneborg, A. ; Jakobsen, H.

Author_Institution

Dept. of Phys., Oslo Univ., Norway

fYear

2003

fDate

19-23 Jan. 2003

Firstpage

626

Lastpage

629

Abstract

A study of ionic contamination of SiO₂ during anodic bonding is presented, using metal-oxide-semiconductor capacitors as test structures. We found that anodic bonding caused the sodium concentration to increase with values between 10¹⁰cm^-2 and 10¹³cm^-2. The largest increases resulted in sodium concentrations that are incompatible with CMOS electronics. The gate electrodes were found to partly shield the oxide from contamination. A PECVD nitride film protected the capacitors more efficiently. The results show that nitride protection of the electronics is essential to minimise sodium contamination if anodic bonding is used to package monolithically integrated MEMS.

Keywords

MOS capacitors; adhesion; integrated circuit packaging; micromechanical devices; plasma CVD coatings; silicon compounds; sodium; CMOS electronics; PECVD nitride film; SiO₂:Na; anodic bonding; integrated MEMS; metal-oxide-semiconductor capacitors; nitride protection; package monolithically integrated MEMS; sodium contamination; Contamination; Electrodes; Electronics packaging; Glass; MOS capacitors; Micromechanical devices; Protection; Silicon; Wafer bonding; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-7744-3

Type

conf

DOI

10.1109/MEMSYS.2003.1189827

Filename

1189827