Title :
High aspect ratio through-wafer interconnections for 3D-microsystems
Author :
Wang, Lingfeng ; Nichelatti, A. ; Schellevis, H. ; de Boer, C. ; Visser, C. ; Nguyen, T.N. ; Sarro, P.M.
Author_Institution :
DIMES, Delft Univ. of Technol., Netherlands
Abstract :
Closely spaced, through-wafer interconnects are of large interest in RF MEMS and MEMS packaging. In this paper, a suitable technique to realize large arrays of small size through-wafer holes is presented. This approach is based on macroporous silicon formation in combination with wafer thinning. Very high aspect ratio (≥ 100) structures are realized. The wafers containing the large arrays of 2-3μm wide holes are thinned down to 200-150μm by lapping and polishing. Copper electroplating is finally employed to realize arrays of high aspect ratio Cu plugs.
Keywords :
copper; electroplated coatings; integrated circuit interconnections; integrated circuit packaging; micromechanical devices; polishing; 2 to 3 micron; 200 to 150 micron; 3D-microsystems; Cu; MEMS packaging; RF MEMS; copper electroplating; high aspect ratio through-wafer interconnections; Anisotropic magnetoresistance; Copper; Etching; Lapping; Micromechanical devices; Packaging; Plugs; Radiofrequency microelectromechanical systems; Silicon; Space technology;
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
Print_ISBN :
0-7803-7744-3
DOI :
10.1109/MEMSYS.2003.1189829
