• DocumentCode
    3334216
  • Title

    Injection-locked CMOS active transformer voltage-controlled oscillators

  • Author

    Yuan, F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, ON, Canada
  • fYear
    2009
  • fDate
    2-5 Aug. 2009
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    This paper presents injection-locked CMOS active transformer voltage-controlled oscillators. The tunable coupling ratio, large and tunable self and mutual inductances, high and tunable quality factors, and a small silicon area consumption of CMOS active transformers allow the oscillators to have a large frequency tuning range with low silicon consumption. The injection-locking mechanism ensures that the phase noise of the oscillators is comparable to that of corresponding LC tank oscillators. The proposed oscillators can be used to construct frequency dividers of high-frequency frequency synthesizers where the oscillators are typically LC-tanks based. One active transformer VCO, three injection-locked active transformer VCOs, and one LC-tank VCO that oscillate at the same frequency have been designed in TSMC-0.18 mum 1.8 V CMOS technology and analyzed using SpectreRF from Cadence Design Systems with BSIM3v3 device models. Simulation results show that the phase noise of active transformer VCO without injection-locking is approximately -92 dBc/Hz at 1 MHz frequency offset. The phase noise of injection-locked active transformer VCOs is approximately -119 dBc/Hz while that of passive LC tank oscillator is -121 dBc/Hz at 1 MHz frequency offset.
  • Keywords
    CMOS integrated circuits; circuit tuning; frequency dividers; frequency synthesizers; impedance convertors; injection locked oscillators; integrated circuit noise; phase noise; silicon; voltage-controlled oscillators; BSIM3v3 device model; LC tank oscillator; SpectreRF from Cadence Design Systems; TSMC CMOS technology; frequency divider; high-frequency frequency synthesizer; injection-locked CMOS active transformer; phase noise; quality factor; self-and-mutual inductance; silicon area consumption; size 0.18 mum; tunable coupling ratio; voltage 1.8 V; voltage-controlled oscillator; CMOS technology; Frequency conversion; Frequency synthesizers; Injection-locked oscillators; Mutual coupling; Phase noise; Q factor; Silicon; Tuning; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
  • Conference_Location
    Cancun
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4244-4479-3
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2009.5236138
  • Filename
    5236138