DocumentCode :
3334335
Title :
Polarization phenomena on silicone
Author :
Casavieille, Frederic ; Lamure, Alain ; Lacabanne, Colette
Author_Institution :
Lab. de Physique des Polymeres, Univ. Paul Sabatier, Toulouse, France
fYear :
1996
fDate :
25-30 Sep 1996
Firstpage :
317
Lastpage :
322
Abstract :
Practical experiments show that silicone adhesion on glass can be increased by eliminating the lowest molecular weight chains. The aim of this work is to precise the influence of short chain segments on silicone mobility. For this study, PolyDimethylSiloxane (PDMS) samples have been characterized by the Thermally Stimulated Current (TSC) spectrometry. In silicone, dielectric relaxations have two different origins: they are associated either with transitions or with polarization phenomena. At lower temperature, all the samples are characterized by the dielectric manifestation of the glass transition and, only after fractionating, with crystallization and melting phenomena. Around the room temperature, the polarization relaxation can be associated with adhesion mechanisms. Complementary dielectric, mechanical and thermal experiments have shown that these relaxation could be associated with surfacic polar group rotations around the Si-O and probably at the origin of silicone adhesive properties
Keywords :
adhesion; crystallisation; dielectric polarisation; dielectric relaxation; glass transition; melting; silicones; thermally stimulated currents; PDMS; TSC spectrometry; adhesion; crystallization; dielectric relaxation; fractionation; glass transition; melting; mobility; molecular weight distribution; polarization; polydimethylsiloxane; short chain segment; silicone; Adhesives; Dielectrics; Equations; Fractionation; Glass; Manufacturing; Polarization; Polymers; Spectroscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
Type :
conf
DOI :
10.1109/ISE.1996.578090
Filename :
578090
Link To Document :
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