DocumentCode
3334374
Title
Simulation and measurements of the internal electric field of a CZT (or CdTe) detector under high X-ray flux for medical imaging
Author
Alirol, Olivier ; Glasser, Francis ; d´Aillon, Eric Gros ; Tabary, Joachim
Author_Institution
CEA-LETI, MINATEC, Grenoble, France
fYear
2009
fDate
Oct. 24 2009-Nov. 1 2009
Firstpage
2460
Lastpage
2464
Abstract
Simulation of room-temperature radiation detector for high X-ray flux application leads to investigate the created space charge. Existing models are based on transport, trapping and subsequent detrapping of charge. Problem is that parameters of these models are difficult to measure and simulation is very sensitive to any variation of these parameters especially for the space-time solution. Our approach is: first we measure the electric field, second we build a model for it. Measuring the electric field provides important information on the distribution and the dynamics of the electric phenomena for a better understanding of the detector behavior under high X-ray flux. Observations show non uniform electric field and a polarization under X-ray irradiation depending on the applied voltage. Experimental measurements and simulations based on charge transport models with trapping effects have also a good correlation.
Keywords
II-VI semiconductors; X-ray applications; X-ray detection; biomedical imaging; cadmium compounds; carrier mobility; semiconductor devices; space charge; CZT detector; charge detrapping; charge transport models; charge trapping; electric phenomena dynamics; high X-ray flux application; medical imaging; room-temperature radiation detector; space charge; space-time solution; temperature 293 K to 298 K; Biomedical imaging; Electric variables measurement; Medical simulation; Polarization; Radiation detectors; Space charge; Voltage; X-ray detection; X-ray detectors; X-ray imaging; CZT detector; CdTe; Pockels; counting mode; electric field; high X-ray flux; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location
Orlando, FL
ISSN
1095-7863
Print_ISBN
978-1-4244-3961-4
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2009.5402099
Filename
5402099
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