DocumentCode
3334398
Title
Total Ionizing Dose Effects and Bias Dependence in Selected Bipolar Devices
Author
Chavez, R.M. ; Rax, B.G. ; Johnston, A.H.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear
2006
fDate
38899
Firstpage
50
Lastpage
56
Abstract
Total dose test results are presented for two high-voltage transistors and three bipolar integrated circuits. Circuit tests were done at a dose rate of 0.005 rad(Si)/s because the devices are sensitive to enhanced damage at low dose rate (ELDRS). An unusual response was observed for one operational amplifier where the sign of the input bias current reversed after it was exposed to approximately 10 krad(Si) at low dose rate
Keywords
bipolar integrated circuits; operational amplifiers; power bipolar transistors; radiation hardening (electronics); bias ionizing dependence; bipolar devices; enhanced damage; high-voltage transistors; low dose rate; operational amplifier; three bipolar integrated circuits; total ionizing dose effects; Bipolar integrated circuits; Circuit testing; Degradation; Doping; Integrated circuit testing; Manufacturing; Operational amplifiers; Pulse amplifiers; Space vehicles; Voltage; ELDRS; Total dose damage; bipolar devices; radiation effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295467
Filename
4077281
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