Temperature-independent high voltage reference design in silicon-on-insulator CMOS technology

Author

Perlinger, Adam ; Subramanium, Seenivasan ; Sukumar, Vinesh ; Li, Harry W. ; Hess, Herbert L.

Author_Institution

Microelectron. Res. & Commun. Inst., Idaho Univ., Moscow, ID, USA

Volume

3

fYear

2004

fDate

2-6 Nov. 2004

Firstpage

3231

Abstract

Temperature independence for voltage reference circuits designed in silicon-on-insulator CMOS technology. This design takes advantage of high-voltage devices recently developed for a 0.35 um process. This paper focuses on unique aspects of design in this process, using a voltage reference as a vehicle. The underlying circuit is a high voltage reference, designed in a diode configuration and in a MOSFET configuration. Layout considerations common to both of the circuits are outlined. Design equations are developed. Performance is characterized through SPICE simulations.

Keywords

CMOS integrated circuits; MOSFET; SPICE; reference circuits; semiconductor diodes; silicon-on-insulator; MOSFET; SPICE simulation; diode configuration; high-voltage devices; silicon-on-insulator CMOS technology; temperature independence; voltage reference circuit; CMOS technology; Diodes; Equations; MOSFET circuits; Process design; SPICE; Silicon on insulator technology; Temperature; Vehicles; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE

Print_ISBN

0-7803-8730-9

Type

conf

DOI

10.1109/IECON.2004.1439404

Filename

1439404