DocumentCode
3334414
Title
Effects of Radiation on Commercial Power Devices
Author
Selva, Luis ; Becker, Heidi ; Chavez, Rosa ; Scheick, Leif
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear
2006
fDate
38899
Firstpage
57
Lastpage
61
Abstract
The effects of radiation on various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons
Keywords
power semiconductor devices; radiation hardening (electronics); BJT; IGBT; commercial power devices; heavy ions; proton radiation; radiation effects; single event effects; Insulated gate bipolar transistors; Laboratories; MOSFETs; NASA; Propulsion; Protons; Space technology; Testing; Thyristors; Voltage; BJT; IGBT; heavy ions; protons; radiation; switch; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295468
Filename
4077282
Link To Document