DocumentCode :
3334414
Title :
Effects of Radiation on Commercial Power Devices
Author :
Selva, Luis ; Becker, Heidi ; Chavez, Rosa ; Scheick, Leif
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear :
2006
fDate :
38899
Firstpage :
57
Lastpage :
61
Abstract :
The effects of radiation on various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons
Keywords :
power semiconductor devices; radiation hardening (electronics); BJT; IGBT; commercial power devices; heavy ions; proton radiation; radiation effects; single event effects; Insulated gate bipolar transistors; Laboratories; MOSFETs; NASA; Propulsion; Protons; Space technology; Testing; Thyristors; Voltage; BJT; IGBT; heavy ions; protons; radiation; switch; transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
Type :
conf
DOI :
10.1109/REDW.2006.295468
Filename :
4077282
Link To Document :
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