The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices

Author

Appaswamy, Aravind ; Jun, Bongim ; Diestelhorst, Ryan M. ; Espinel, Gustavo ; Prakash, A. P Gnana ; Cressler, John D. ; Marshall, Paul W. ; Marshall, Cheryl J. ; Liang, Qingqing ; Freeman, Greg ; Isaacs-Smith, Tamara ; Williams, John R.

Author_Institution

Dept. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

38899

Firstpage

62

Lastpage

65

Abstract

The effects of 63 MeV proton irradiation on 90 nm strained silicon CMOS on insulator is examined for the first time. The devices show no observable degradation in DC performance up to an equivalent total dose of 600 krad(Si). The performance of the strained pFETs is identical to unstrained pFETs and demonstrates the immunity of strain to displacement damage. There is no significant enhancement observed in back channel leakage for the maximum dose. Passive exposure to 2 Mrad(Si) using 4 MeV protons doesn´t induce any significant performance degradation

Keywords

CMOS integrated circuits; protons; radiation hardening (electronics); silicon; silicon-on-insulator; 4 MeV; 63 MeV; 90 nm; SOI devices; Si; proton irradiation; radiation tolerance; silicon on insulator; strain-to-displacement damage; strained silicon CMOS; CMOS technology; Capacitive sensors; Degradation; Ionizing radiation; Isolation technology; Protons; Pulse width modulation; Silicon on insulator technology; Single event upset; Space technology; SOI; radiation tolerance; strained silicon CMOS; total dose effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2006 IEEE

Conference_Location

Ponte Vedra, FL

Print_ISBN

1-4244-0638-2

Type

conf

DOI

10.1109/REDW.2006.295469

Filename

4077283