Influence of Bi³+ Doping on Photocatalytic Activity of TiO2 Film

Author

Jiang Yanli ; Liu Yan ; Liu Ran ; Liu Jiayao ; Liu Huiling

Author_Institution

Dept. of Environ. Eng., Harbin Inst. of Technol., Harbin, China

fYear

2011

fDate

10-12 May 2011

Firstpage

1

Lastpage

2

Abstract

With the approach of anodic oxidation, TiO₂/Ti film doped with Bi³⁺ was produced in H₂SO₄ electrolyte mixed with Bi(NO₃)₃·5H₂O. The surface morphology were studied with scanning electron microscopy. The phase composition of the films was studied by X-ray diffraction The photocatalytic activity of the films was compared through the photocatalytic degradation rate of Rhodamine B. The relations of the photocatalytic activity to the concentration of Bi³⁺, the microstructure of the film were investigated. The results showed that Bi³⁺ increased the surface roughness and restrained the growth of crystal. In addition, the Rhodamine B was successfully photodegraded under UV illumination by Bi³⁺-TiO₂/Ti film It was found that the highest degradation rate of rhodamine B was achieved through an optimal Bi³⁺ dosage of 0.6mol/L in Bi³⁺-TiO₂/Ti film Compared with TiO₂/Ti film, the recombination rate of e^- and h⁺ of Bi³⁺-TiO₂/Ti film was decreased.

Keywords

X-ray diffraction; anodisation; bismuth; catalysis; doping; electrolytes; infrared spectra; mixing; photochemistry; scanning electron microscopy; surface morphology; surface roughness; thin films; titanium; titanium compounds; ultraviolet spectra; visible spectra; Bi³⁺ doping; H₂SO₄ electrolyte; TiO₂-Ti film; TiO₂-Ti:Bi; X-ray diffraction; anodic oxidation; microstructure; mixing; phase composition; photocatalytic activity; photocatalytic degradation; recombination rate; rhodamine B; scanning electron microscopy; surface morphology; surface roughness; ultraviolet illumination; Absorption; Degradation; Doping; Films; Oxidation; Rough surfaces; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bioinformatics and Biomedical Engineering, (iCBBE) 2011 5th International Conference on

Conference_Location

Wuhan

ISSN

2151-7614

Print_ISBN

978-1-4244-5088-6

Type

conf

DOI

10.1109/icbbe.2011.5780911

Filename

5780911