DocumentCode
3334604
Title
Radiation Tests on 2Gb NAND Flash Memories
Author
Nguyen, D.N. ; Guertin, S.M. ; Patterson, J.D.
Author_Institution
Jet Propulsion Lab., Pasadena, CA
fYear
2006
fDate
38899
Firstpage
121
Lastpage
125
Abstract
We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures
Keywords
NAND circuits; flash memories; radiation hardening (electronics); 2 Gbit; NAND flash memories; SEE tests; TID tests; radiation tests; radiation-induced failures; single event upset; single-event-functional-interrupt failures; Electrons; Flash memory; Nonvolatile memory; Propulsion; Registers; Single event upset; Space missions; Testing; Tunneling; Voltage; Flash; In-situ; SEE; TID;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295479
Filename
4077293
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