Title :
Radiation Tests on 2Gb NAND Flash Memories
Author :
Nguyen, D.N. ; Guertin, S.M. ; Patterson, J.D.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA
Abstract :
We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures
Keywords :
NAND circuits; flash memories; radiation hardening (electronics); 2 Gbit; NAND flash memories; SEE tests; TID tests; radiation tests; radiation-induced failures; single event upset; single-event-functional-interrupt failures; Electrons; Flash memory; Nonvolatile memory; Propulsion; Registers; Single event upset; Space missions; Testing; Tunneling; Voltage; Flash; In-situ; SEE; TID;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295479
