DocumentCode
3334613
Title
Quantum interference in transistors
Author
Shutenko, Timur A. ; Aleiner, Igor L. ; Altshuler, Boris L.
Author_Institution
Phys. Dept., Odessa Nat. Acad. of Telecommun., Odessa
fYear
2008
fDate
22-24 Sept. 2008
Firstpage
126
Lastpage
129
Abstract
We consider adiabatic charge transport through transistor based on quantum dot caused by two periodically changing external perturbations. Both the magnitude and the sign of the transmitted charge are extremely sensitive to the configuration of the transistor and to the magnetic field. We find the correlation function characterizing the random value of this pumped charge for arbitrary strength of perturbation. In contrast to previous theoretical and experimental claims, the charge is found not to have any symmetry with respect to the inversion of magnetic field. At strong pumping perturbation, the variance of the charge , <Q2> is found to be proportional to the length of the contour in parametric space.
Keywords
correlation methods; perturbation techniques; quantum dots; quantum interference devices; transistors; adiabatic charge transport; charge pumping; correlation function; periodically changing external perturbations; quantum dot; quantum interference; transistors; Charge pumps; Electrons; FETs; Interference; Magnetic fields; Particle scattering; Physics; Quantum dots; Space charge; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar and Remote Sensing Symposium, 2008. MRRS 2008
Conference_Location
Kiev
Print_ISBN
978-1-4244-2688-1
Electronic_ISBN
978-1-4244-2689-8
Type
conf
DOI
10.1109/MRRS.2008.4669561
Filename
4669561
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