DocumentCode :
3334613
Title :
Quantum interference in transistors
Author :
Shutenko, Timur A. ; Aleiner, Igor L. ; Altshuler, Boris L.
Author_Institution :
Phys. Dept., Odessa Nat. Acad. of Telecommun., Odessa
fYear :
2008
fDate :
22-24 Sept. 2008
Firstpage :
126
Lastpage :
129
Abstract :
We consider adiabatic charge transport through transistor based on quantum dot caused by two periodically changing external perturbations. Both the magnitude and the sign of the transmitted charge are extremely sensitive to the configuration of the transistor and to the magnetic field. We find the correlation function characterizing the random value of this pumped charge for arbitrary strength of perturbation. In contrast to previous theoretical and experimental claims, the charge is found not to have any symmetry with respect to the inversion of magnetic field. At strong pumping perturbation, the variance of the charge , <Q2> is found to be proportional to the length of the contour in parametric space.
Keywords :
correlation methods; perturbation techniques; quantum dots; quantum interference devices; transistors; adiabatic charge transport; charge pumping; correlation function; periodically changing external perturbations; quantum dot; quantum interference; transistors; Charge pumps; Electrons; FETs; Interference; Magnetic fields; Particle scattering; Physics; Quantum dots; Space charge; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar and Remote Sensing Symposium, 2008. MRRS 2008
Conference_Location :
Kiev
Print_ISBN :
978-1-4244-2688-1
Electronic_ISBN :
978-1-4244-2689-8
Type :
conf
DOI :
10.1109/MRRS.2008.4669561
Filename :
4669561
Link To Document :
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