Title :
Radiation Hardness of Hardened-By-Design SRAMs in Commercial Foundry Technologies
Author :
Nowlin, R. Nathan ; Begay, Cynthia Salomonson ; Parker, Robert R. ; Garrett, Michael P. ; Penner, Timothy D.
Author_Institution :
Mission Res. Microelectron. Div., Alliant Techsystems (ATK), Albuquerque, NM
Abstract :
Hardened-by-design (HBD) SRAMs are shown to be latchup immune in four commercial foundry technologies. The single-event error rates are shown to be less than 10-9 errors/bit/day for these HBD SRAMs. We also report total-dose and prompt-dose hardness results. Hardness assurance of HBD SRAMs in commercial processes is considered
Keywords :
SRAM chips; foundries; radiation hardening (electronics); commercial foundry technologies; hardened-by-design SRAM; prompt-dose hardness; radiation hardness; single-event error rates; total-dose hardness; Circuit testing; Error analysis; Flip-flops; Foundries; Immune system; Ionizing radiation; Libraries; Radiation hardening; Random access memory; Single event upset; CMOS Static Random Access Memories; Hardness Assurance; Radiation Hardening by Design; Single Event Effects; Total Ionizing Dose;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295482
