Title :
Single Event Effects Sensitivity of the Q Series Advanced CMOS Technology
Author :
Koga, R. ; George, J. ; Yu, P. ; Crain, S. ; Zakrzewski, M. ; Crawford, K.
Author_Institution :
Aerosp. Corp., El Segundo, CA
Abstract :
Heavy ion induced SEEs for the quiet series FACT devices are presented. SETs take place in devices with memory elements as well as in simple gates. These devices are tolerant to SEEs at low LET values
Keywords :
CMOS integrated circuits; radiation hardening (electronics); CMOS technology; FACT devices; advanced complementary metal-oxide-semiconductor; heavy ion; memory elements; quiet series; radiation effects; single event effects sensitivity; Aerospace testing; CMOS technology; Circuit testing; Clocks; Driver circuits; Flip-flops; Oscilloscopes; Radiation effects; Single event upset; Space vector pulse width modulation; advanced complementary metal-oxide-semiconductor; radiation effects; single event effects;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295483
