Title :
Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process
Author :
Poivey, Christian ; Kim, Hak ; Berg, Melanie D. ; Forney, Jim ; Seidleck, Christina ; Vilchis, Miguel A. ; Phan, Anthony ; Irwin, Tim ; LaBel, Kenneth A. ; Saigusa, Rajan K. ; Mirabedini, Mohammad R. ; Finlinson, Rick ; Suvkhanov, Agajan ; Hornback, Verne
Author_Institution :
MEI Technol., Seabrook, MD
Abstract :
The authors present radiation data, total ionizing dose and single event effects, on the LSI logic 0.11 μm commercial process and two modified versions of this process. Modified versions include a buried layer to guarantee single event latch up immunity.
Keywords :
CMOS digital integrated circuits; buried layers; flip-flops; large scale integration; radiation hardening (electronics); 0.11 micron; CMOS digital integrated circuits; LSI logic; buried layer; radiation data; radiation effects; radiation hardening; single event effects; single event latch up immunity; total ionizing dose; CMOS process; Electronics packaging; Large scale integration; Logic; Plastic packaging; Power supplies; Random access memory; Testing; Vehicles; Voltage; CMOS digital integrated circuits; Radiation effects; Radiation hardening;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295484
