DocumentCode
3334716
Title
Single Event Transients (SETs) in the RH108 Operational Amplifier in Analog Circuits
Author
Chavez, Rosa M. ; Scheick, Leif Z. ; Miyahira, Tetsuo F. ; Johnston, Allan H.
Author_Institution
Jet Propulsion Lab., NASA, Pasadena, CA
fYear
2006
fDate
38899
Firstpage
154
Lastpage
159
Abstract
The effects of various commercial power devices are presented. The devices have proved to be very fragile to single event effects, with some of the devices actually succumbing to catastrophic SEE with protons
Keywords
analogue circuits; insulated gate bipolar transistors; operational amplifiers; protons; radiation hardening (electronics); BJT; IGBT; RH108 operational amplifier; analog circuits; heavy ions; power devices; protons; radiation hardening; single event effects; single event transients; Analog circuits; Circuit testing; Laboratories; NASA; Operational amplifiers; Propulsion; Protons; Regulators; Space technology; Voltage; BJT; IGBT; heavy ions; protons; radiation; switch; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295485
Filename
4077299
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