Evaluation of Worst-Case Test Conditions for SEE on Power DMOSFETs

Author

Liu, Sandra ; Boden, Milt ; Cao, Huy ; Sanchez, Ed ; Titus, Jeffrey L.

Author_Institution

Int. Rectifier Corp., El Segundo, CA

fYear

2006

fDate

38899

Firstpage

165

Lastpage

171

Abstract

Extensive single event effects tests were performed on a new generation, the R6 process, of radiation-hardened 600-volt and 250-volt power metal-oxide semiconductor field-effect transistors (MOSFETs) from international rectifier using two different ions (krypton and xenon) at many different beam energies, Bragg peak positions, and drain and gate biases. Results show that there is no worst-case test condition for single event burnout but positioning of the energy deposition is critical for single event gate rupture

Keywords

krypton; power MOSFET; radiation hardening (electronics); rectifiers; xenon; 250 V; 600 V; Bragg peak positions; R6 process; international rectifier; krypton; power DMOSFET; radiation hardening; single event burnout; single event effects; single event gate rupture; worst-case test conditions; xenon; Buffer layers; Cranes; Doping profiles; Epitaxial layers; Ion beams; Low voltage; MOSFETs; Medium voltage; Rectifiers; Semiconductor device testing; Buffer Layer; MOSFET; Power DMOSFET; R6; SEB; SEGR; single-event burnout; single-event gate rupture; worst-case test condition;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2006 IEEE

Conference_Location

Ponte Vedra, FL

Print_ISBN

1-4244-0638-2

Type

conf

DOI

10.1109/REDW.2006.295487

Filename

4077301