Title :
Determination of High Energy Neutron Voltage Stress Margins for High Voltage IGBT and Diode Pairs from Two Manufacturers using Energetic Particle Induced Charge Spectroscopy, EPICS
Author :
Edwards, Robert ; Woodhouse, John
Abstract :
The use of high voltage [above 200V] electronic IGBT drives is increasing. To avoid destructive SEB of high voltage devices in the atmospheric neutron radiation environment, derating is recommended. The EPICS method is used to investigate actual IGBT and diode voltage stress margins for 2 manufacturers, both below and at SEB
Keywords :
avionics; insulated gate bipolar transistors; neutron effects; power integrated circuits; power semiconductor diodes; radiation hardening (electronics); EPICS; atmospheric neutron radiation; diode pairs; electronic IGBT drives; energetic particle induced charge spectroscopy; high energy neutron voltage stress margins; high voltage devices; high voltage integrated circuit; single event burnout; Aerospace electronics; Diodes; Insulated gate bipolar transistors; Manufacturing; Neutrons; Spectroscopy; Stress; Test equipment; Testing; Voltage; EPICS; IGBT; SEB; Single Event Burnout; atmospheric radiation; derating; high voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location :
Ponte Vedra, FL
Print_ISBN :
1-4244-0638-2
DOI :
10.1109/REDW.2006.295488
