• DocumentCode
    3334898
  • Title

    Analyses of structure design and Ids nonlinear modeling for 5-watt multi-cell microwave GaAs MESFET

  • Author

    Gao, YiFan ; Gu, Cong

  • Author_Institution
    Xian Highway Univ., Shaanxi, China
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    400
  • Abstract
    The characteristics are described for a GaAs MESFET with 5-watt large-gate-width multi-cell structure, including optimal structure design, processes and high breakdown voltage and overcurrent capacity. Also, we propose a modified Ids nonlinear model, and the agreement with experiment using this typical model was better than the results given by directly employing the common models
  • Keywords
    III-V semiconductors; equivalent circuits; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device breakdown; semiconductor device models; 5 W; GaAs; high breakdown voltage; large-gate-width structure; microwave GaAs MESFET; modified Ids nonlinear model; multi-cell power MESFET; optimal structure design; overcurrent capacity; structure design analysis; Electron beams; Gallium arsenide; Intrusion detection; MESFETs; Microwave FETs; Microwave devices; Predictive models; Semiconductor device modeling; Threshold voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications in Modern Satellite, Cable and Broadcasting Services, 1999. 4th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5768-X
  • Type

    conf

  • DOI
    10.1109/TELSKS.1999.806239
  • Filename
    806239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3334898