DocumentCode :
3335341
Title :
Recent advances on electrical contact resistance: Theory and experiment
Author :
Peng Zhang ; Gomez, M.R. ; French, D.M. ; Tang, W. ; Lau, Y.Y. ; Gilgenbach, R.M.
Author_Institution :
Dept. of Nucl. Eng. & Radiol. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2010
fDate :
20-24 June 2010
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. Electrical contact is important to thin film devices and integrated circuits, carbon nanotubes based cathodes and interconnects, field emitters, wire-array Z pinches, metal insulator-vacuum junctions, and high power microwave sources, etc. Because of the surface roughness on a microscopic scale, true contact between two pieces of conductors occurs only at the asperities of the two contacting surfaces, leading to contact resistance. For a long time, the basic model for contact resistance remains that of Holm´s a-spot, where the current flows through a circular disk constriction of a small radius a and zero thickness at the bulk interface. In this paper, we vastly extend Holm´s a-spot theory to higher dimensions, including dissimilar materials in the main current channels and in the connecting bridge joining them. Both Cartesian and cylindrical channels have been analyzed. A scaling law for the contact resistance has been constructed for arbitrary values of the dimensions of the channels and bridges, and for arbitrary electrical resistivity in each section. This scaling law was confirmed against spot checks with the MAXWELL 3D code. It also recovers the same results for all known cases, including connecting bridges of the same resistivity. This latter special case was also confirmed in our recent experiments.
Keywords :
Z pinch; contact resistance; electrical contacts; plasma simulation; plasma transport processes; thin film devices; Cartesian channel; Holm a-spot theory; Maxwell 3D code; arbitrary electrical resistivity; carbon nanotubes; circular disk constriction; current channel; current flow; cylindrical channel; electrical contact resistance; high power microwave source; metal insulator-vacuum junction; scaling law; surface roughness; thin film device; wire-array Z pinch; Bridge circuits; Carbon nanotubes; Contact resistance; Electric resistance; Joining processes; Microwave integrated circuits; Rough surfaces; Surface resistance; Surface roughness; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2010 Abstracts IEEE International Conference on
Conference_Location :
Norfolk, VA
ISSN :
0730-9244
Print_ISBN :
978-1-4244-5474-7
Electronic_ISBN :
0730-9244
Type :
conf
DOI :
10.1109/PLASMA.2010.5534370
Filename :
5534370
Link To Document :
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