DocumentCode
3335567
Title
Vertically integrated circuits at fermilab
Author
Deptuch, Grzegorz ; Demarteau, Marcel ; Hoff, James ; Lipton, Ronald ; Shenai, Alpana ; Trimpl, Marcel ; Yarema, Raymond ; Zimmerman, Tom
Author_Institution
Electr. Eng. Dept., Fermi Nat. Accel. Lab., Batavia, IL, USA
fYear
2009
fDate
Oct. 24 2009-Nov. 1 2009
Firstpage
1907
Lastpage
1915
Abstract
The exploration of the vertically integrated circuits, also commonly known as 3D-IC technology, for applications in radiation detection started at Fermilab in 2006. This paper examines the opportunities that vertical integration offers by looking at various 3D designs that have been completed by Fermilab. The emphasis is on opportunities that are presented by through silicon vias (TSV), wafer and circuit thinning and finally fusion bonding techniques to replace conventional bump bonding. Early work by Fermilab has led to an international consortium for the development of 3D-IC circuits for High Energy Physics. The consortium has submitted over 25 different designs for the Fermilab organized MPW run organized for the first time.
Keywords
bonding processes; integrated circuit bonding; nuclear electronics; silicon radiation detectors; 3D IC technology; Fermilab; High Energy Physics; MPW run; circuit thinning; fusion bonding technique; radiation detection; through silicon vias; vertically integrated circuits; wafer; Application specific integrated circuits; Fabrication; Integrated circuit technology; Laboratories; Microelectronics; Particle accelerators; Silicon; Three-dimensional integrated circuits; Through-silicon vias; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location
Orlando, FL
ISSN
1095-7863
Print_ISBN
978-1-4244-3961-4
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2009.5402167
Filename
5402167
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