Title :
Current status and prospects of FET-type ferroelectric memories
Author_Institution :
Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In this talk, novel MFSFET (metal-ferroelectric-semiconductor FET) arrays for applying to a single-transistor-cell-type digital memory and to a synaptic connection circuit in an artificial neural network are first introduced. Then, current status of the experimental studies on MF(MI)S (I: insulator) capacitors and FETs is presented and finally prospects of FET-type ferroelectric memory are discussed.
Keywords :
MISFET; ferroelectric storage; FET-type ferroelectric memory; MFSFET array; artificial neural network; single-transistor-cell-type digital memory; synaptic connection circuit; Capacitors; Electrodes; FETs; Ferroelectric films; Ferroelectric materials; Insulation; Nonvolatile memory; Polarization; Random access memory; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806306
