DocumentCode :
3335659
Title :
A poly to active region VLSI mask alignment test structure
Author :
Ramesh, Tirumale
Author_Institution :
Dept. of Electr. Eng., Saginaw Valley State Univ., Univ. Center, MI, USA
fYear :
1991
fDate :
1-2 Mar 1991
Firstpage :
278
Lastpage :
283
Abstract :
Present day CMOS technologies require continuous evaluation of the technology in terms of optimizing the design rules. Electrical monitoring of mask alignment is one such evaluation tool. A VLSI test structure for monitoring the poly to active region mask misalignment is presented. The structure is designed based on 2-micron scalable CMOS (SCMOS) design rules. The issues related to sensitivity of the measurement, and some critical design considerations are discussed
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; integrated circuit testing; masks; monitoring; 2 micron; CMOS technologies; VLSI mask alignment; electrical monitoring; lithographic mask; poly to active region mask misalignment; test structure; CMOS technology; Contacts; Design optimization; Floors; Monitoring; Resistors; Semiconductor device measurement; Testing; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI, 1991. Proceedings., First Great Lakes Symposium on
Conference_Location :
Kalamazoo, MI
Print_ISBN :
0-8186-2170-2
Type :
conf
DOI :
10.1109/GLSV.1991.143979
Filename :
143979
Link To Document :
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