DocumentCode
3335676
Title
60 nm /spl Gamma/-gate MOSFETs with self-aligned drain extension formed by solid phase diffusion
Author
To, K.H. ; Woo, J.C.S.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1999
fDate
23-23 June 1999
Firstpage
24
Lastpage
25
Abstract
60 nm /spl Gamma/-gate nMOSFETs with self-aligned drain extension formed by solid phase diffusion have been demonstrated. Very small gate length (Lg) was achieved by a spacer defined gate. Devices show small short channel effects as well as high transconductance. The /spl Gamma/ shaped gate architecture allows small gate resistance even with small Lg, which makes it a promising structure for CMOS RF circuits.
Keywords
MOSFET; diffusion; /spl Gamma/-gate MOSFET; 60 nm; CMOS RF circuit; gate length; gate resistance; self-aligned drain extension; short channel effect; solid phase diffusion; spacer defined gate; transconductance; Annealing; Degradation; Electric resistance; Etching; Gallium arsenide; Implants; MESFETs; MOSFET circuits; Radio frequency; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806310
Filename
806310
Link To Document