Title :
60 nm /spl Gamma/-gate MOSFETs with self-aligned drain extension formed by solid phase diffusion
Author :
To, K.H. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
60 nm /spl Gamma/-gate nMOSFETs with self-aligned drain extension formed by solid phase diffusion have been demonstrated. Very small gate length (Lg) was achieved by a spacer defined gate. Devices show small short channel effects as well as high transconductance. The /spl Gamma/ shaped gate architecture allows small gate resistance even with small Lg, which makes it a promising structure for CMOS RF circuits.
Keywords :
MOSFET; diffusion; /spl Gamma/-gate MOSFET; 60 nm; CMOS RF circuit; gate length; gate resistance; self-aligned drain extension; short channel effect; solid phase diffusion; spacer defined gate; transconductance; Annealing; Degradation; Electric resistance; Etching; Gallium arsenide; Implants; MESFETs; MOSFET circuits; Radio frequency; Solids;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806310
