Title :
Straddle gate transistors: high I/sub on//I/sub off/ transistors at short gate lengths
Author :
Tiwari, S. ; Welser, J.J. ; Kumar, A. ; Cohen, S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Straddle gate transistors are structures where the source/drain doped extension regions of a transistor are separated from the transistor control region through a low threshold-voltage side-wall which turns on before the transistor, and provides high conductance injection. By providing for gate modulation of this region, the transistor has effectively a longer channel length when it is off and shorter channel length when it is on. We show, experimentally and theoretically, how this leads to lower off currents, higher I/sub on//I/sub off/ ratios and a path to smaller devices that are not limited by the constraints of shallow doping extensions.
Keywords :
MOSFET; MOSFET; channel length; conductance injection; gate length; gate modulation; on-current/off-current ratio; shallow doping extension; sidewall; straddle gate transistor; Etching; Kinetic energy; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806311