Straddle gate transistors: high I/sub on//I/sub off/ transistors at short gate lengths

Straddle gate transistors are structures where the source/drain doped extension regions of a transistor are separated from the transistor control region through a low threshold-voltage side-wall which turns on before the transistor, and provides high conductance injection. By providing for gate modulation of this region, the transistor has effectively a longer channel length when it is off and shorter channel length when it is on. We show, experimentally and theoretically, how this leads to lower off currents, higher I/sub on//I/sub off/ ratios and a path to smaller devices that are not limited by the constraints of shallow doping extensions.