Title :
35 nm metal gate SOI-p-MOSFETs with PtSi Schottky source/drain
Author :
Saitoh, W. ; Yamagami, S. ; Itoh, A. ; Asada, M.
Author_Institution :
Tokyo Inst. of Technol., Japan
Abstract :
35 nm-long metal gate p-MOSFETs with PtSi Schottky source/drain were fabricated on a SIMOX substrate by electron beam lithography and self aligned silicide process and their room temperature operation was demonstrated. The drain current, the transconductance and the on/off ratio were -176 /spl mu/A//spl mu/m, 390 mS/mm and 420, respectively at V/sub DS/=V/sub GS/=-1.5 V. To our knowledge, this is the shortest p-type SOI MOSFET with metal gate.
Keywords :
MOSFET; Schottky barriers; platinum compounds; silicon-on-insulator; -1.5 V; 35 mm; PtSi; PtSi Schottky source/drain; SIMOX substrate; drain current; electron beam lithography; metal gate p-type SOI-MOSFET; on/off ratio; room temperature operation; self-aligned silicide; transconductance; Chromium; Electrodes; Electron beams; Gold; Lithography; MOSFET circuits; Schottky barriers; Silicides; Temperature; Transconductance;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806313
