Title :
High suppression of the short-channel effect in ultrathin SOI n-MOSFETs
Author :
Suzuki, E. ; Ishii, K. ; Kanemaru, S. ; Maeda, T. ; Sekigawa, T. ; Nagai, K. ; Tsutsumi, T. ; Hiroshima, H.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Abstract :
High suppression of threshold voltage roll-off and subthreshold slope characteristics have been experimentally shown in ultrathin SOI n-MOSFETs in the 40-135 nm gate length regime, and the effectiveness of an ultrathin SOI layer to prevent the short channel effect was experimentally confirmed.
Keywords :
MOSFET; silicon-on-insulator; 40 to 135 nm; short channel effect; subthreshold slope; threshold voltage roll-off; ultrathin SOI n-MOSFET; Circuit simulation; Degradation; Epitaxial layers; Fabrication; Laboratories; Lithography; MOSFET circuits; Safety; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806314
