Title :
4 kV silicon carbide Schottky diodes for high-frequency switching applications
Author :
McGlothlin, H.M. ; Morisette, D.T. ; Cooper, J.A., Jr. ; Melloch, M.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Schottky rectifiers exhibit minimal reverse recovery current, and are thus preferred over PiN diodes for high-frequency switching applications such as industrial motor controls and electric vehicle inverters. Implementation of Schottky devices in SiC material has the advantage of producing very high blocking voltages with a moderate epi thickness compared to silicon devices produced in industry today. In this report we describe the first 4 kV Schottky diodes in 4H-SiC. The development of these devices follows earlier work in which breakdown voltages of 1720 V were obtained on 13 /spl mu/m 4H-SiC epilayers.
Keywords :
Schottky diodes; power semiconductor diodes; power semiconductor switches; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4 kV; 4H-SiC epilayer; Schottky rectifier; SiC; blocking voltage; breakdown voltage; high-frequency switching; silicon carbide Schottky diode; Annealing; Application software; Nickel; Nitrogen; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Testing; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806316