Title :
High temperature, high current, p-channel UMOS 4H-SiC IGBT
Author :
Singh, R. ; Sei-Hyung Ryu ; Palmour, J.W.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Abstract :
Commercial silicon Insulated Gate Bipolar Transistors (IGBTs) offer an excellent balance in terms of on-state voltage drop, speed, I-V safe operating area and MOS gate control. A p-channel UMOS IGBT is suitable for fabrication in 4H-SiC because: (a) extremely low resistivity p-type substrates are not considered feasible in SiC; (b) the inherent PMOS transistor offers superior high temperature reliability; (c) a UMOS structure offers a much higher channel packing density than other structures; and (d) lower micropipe density substrates are available in 4H-SiC as compared to 6H-SiC. This paper reports the design, fabrication and high temperature characterization of the first 4H-SiC IGBT with a high current rating (1.5 A) and excellent high temperature characteristics (operating up to 350/spl deg/C).
Keywords :
high-temperature electronics; insulated gate bipolar transistors; silicon compounds; wide band gap semiconductors; 1.5 A; 350 C; SiC; high temperature high current operation; insulated gate bipolar transistor; p-channel UMOS 4H-SiC IGBT; Buffer layers; Current measurement; Fabrication; Insulated gate bipolar transistors; Low voltage; MOSFETs; Ohmic contacts; Silicon; Substrates; Temperature;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806318
