High temperature, high current, p-channel UMOS 4H-SiC IGBT

Commercial silicon Insulated Gate Bipolar Transistors (IGBTs) offer an excellent balance in terms of on-state voltage drop, speed, I-V safe operating area and MOS gate control. A p-channel UMOS IGBT is suitable for fabrication in 4H-SiC because: (a) extremely low resistivity p-type substrates are not considered feasible in SiC; (b) the inherent PMOS transistor offers superior high temperature reliability; (c) a UMOS structure offers a much higher channel packing density than other structures; and (d) lower micropipe density substrates are available in 4H-SiC as compared to 6H-SiC. This paper reports the design, fabrication and high temperature characterization of the first 4H-SiC IGBT with a high current rating (1.5 A) and excellent high temperature characteristics (operating up to 350/spl deg/C).