Design and demonstration of C-band static induction transistors in 4H silicon carbide

The biggest drawback of the static induction transistor (SIT) as a microwave amplifier is the relatively low transconductance and high input capacitance, leading to a low cut-off frequency (f/sub T/). The highest f/sub T/ reported to date for SiC SITs is 4.1 GHz, thereby limiting these devices to L-band and S-band operation (< 2 GHz). In this presentation we provide guidelines for extending the f/sub T/ of SiC SITs to 20 GHz and above, and report the first experimental demonstration of C-band SITs in 4H-SiC with f/sub T/ of 7 GHz.